MEMRISTOR AND METHODS FOR MAKING THE SAME
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United States of America Patent
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Issued Date -
May 19, 2016
app pub date -
Jul 31, 2013
filing date -
Jul 31, 2013
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
An example of the memristor includes a bottom electrode, a switchable material positioned on the bottom electrode, and a cured negative or positive resist that forms an interlayer dielectric positioned on the switchable material. An open area is formed in the interlayer dielectric. The open area exposes a surface of the switchable material. A top electrode is positioned in contact with the exposed surface of the switchable material at the open area.
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