Monolithic nano-cavity light source on lattice mismatched semiconductor substrate

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United States of America Patent

PATENT NO 9728671
SERIAL NO

14541986

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Abstract

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An optoelectronic light emission device is provided that includes a gain region of at least one type III-V semiconductor layer that is present on a lattice mismatched semiconductor substrate. The gain region of the type III-V semiconductor layer has a nanoscale area using nano-cavities. The optoelectronic light emission device is free of defects.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Leobandung, Effendi Stormville, US 536 4756
Li, Ning White Plains, US 710 4065
Ning, Tak H Yorktown Heights, US 251 3236
Plouchart, Jean-Oliver New York, US 18 177
Sadana, Devendra K Pleasantville, US 897 9915

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