SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, AND DISPLAY UNIT AND ELECTRONIC APPARATUS
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United States of America Patent
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Issued Date -
May 26, 2016
app pub date -
Jun 23, 2015
filing date -
Nov 26, 2014
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Abstract
Provided is a semiconductor device, including a transistor in which an oxide semiconductor film, a gate insulating film, and a gate electrode are stacked in order, in which the oxide semiconductor film includes a first region portion and a second region portion. The oxide semiconductor film includes indium (In), zinc (Zn), and one or more of tin (Sn), gallium (Ga), and aluminum (Al). The first region portion is located, in a thickwise direction, in vicinity of an interface between the oxide semiconductor film and the gate insulating film, in the oxide semiconductor film. A composition ratio of the one or more of tin, gallium, and aluminum in the first region portion is higher than a composition ratio of the one or more of tin, gallium, and aluminum in the second region portion.
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