Using Metal Silicides as Electrodes for MSM Stack in Selector for Non-Volatile Memory Application
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United States of America Patent
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Issued Date -
May 26, 2016
app pub date -
Nov 25, 2014
filing date -
Nov 25, 2014
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Abandoned
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Abstract
Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). The metal layer of the selector element can include conductive materials such as metal silicides, and metal silicon nitrides. Conductive materials of the MSM may include tantalum silicide, tantalum silicon nitride, titanium silicide, titanium silicon nitride, or combinations thereof.
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