SUBSTRATE PROCESSING APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM

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United States of America Patent

SERIAL NO

15007513

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Abstract

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A method for manufacturing a semiconductor device includes: supplying a remover to a substrate including a Si-containing film on which a denatured layer is formed in order to remove the denatured layer; supplying a processing gas containing two or more halogen elements to the substrate in order to remove the Si-containing film; and supplying the remover to the substrate after the act of removing the Si-containing film in order to remove a residue of the denatured layer left after the act of removing the Si-containing film.

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Patent Owner(s)

Patent OwnerAddress
HITACHI KOKUSAI ELECTRIC INC15-12 NISHI-SHIMBASHI 2-CHOME MINATO-KU TOKYO 105-8039

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HIYAMA, Shin Toyama-shi, JP 23 421
KAMEDA, Kenji Toyama-shi, JP 45 649
TSUBOTA, Yasutoshi Toyama-shi, JP 27 46
WADA, Yuichi Toyama-shi, JP 75 982

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