Metal-insulator-metal on-die capacitor with partial vias
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United States of America Patent
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Oct 2, 2018
Grant Date -
Jun 2, 2016
app pub date -
Jun 26, 2013
filing date -
Jun 26, 2013
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Abstract
A Metal-Insulator-Metal on-die capacitor is described with partial vias. In one example, first and second power grid layers are formed in a semiconductor die. The power grid layers have power rails. First and second metal plates are formed in metal layers of the die between the power grid layers. Full vias extend from a power rail of the first polarity of the first power grid layer to a first side of the second metal plate and from a second side of the second metal plate opposite the first side of the metal plate to a power rail of the first polarity of the second power grid layer. Partial vias extend from the power rail of the first polarity of the second power grid layer and end at the second side of the second metal plate.
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