Interconnect structure for an integrated circuit and method of fabricating an interconnect structure
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United States of America Patent
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Oct 11, 2016
Grant Date -
Jun 2, 2016
app pub date -
Dec 1, 2014
filing date -
Dec 1, 2014
priority date (Note) -
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Abstract
An integrated circuit includes first and second metallization levels. The first metallization level includes a first metal routing path. The second metallization level includes a dielectric layer having a via opening formed therein extending vertically through the dielectric layer to reach a top surface of the first metal routing path. A metal plug is deposited at a bottom of the via opening in direct contact with the first metal routing path. A remaining open area of the via opening is filled with a metal material to define a second metal routing path. The metal plug is formed of cobalt or an alloy including cobalt, and has an aspect ratio of greater than 0.3.
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