Integrated Circuit Comprising Group III-N Transistors Monolithically Integrated on a Silicon Substrate and a Method for Manufacturing Thereof

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United States of America Patent

APP PUB NO 20160163695A1
SERIAL NO

14963650

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Abstract

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An integrated circuit comprising a first III-N transistor having a source region and a second III-N transistor having a source region, both transistors being monolithically integrated on a common silicon substrate of a first doping type and separated from each-other by an isolation region, the substrate comprising underneath the first transistor a well of a first doping type electrically connected to the source region of the first transistor and comprising underneath the second transistor a well of a second doping type electrically connected to the source region of the second transistor, thereby forming a junction diode in the substrate between the sources of the first and the second transistor.

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IMEC VZWKAPELDREEF 75 LEUVEN 3001

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Decoutere, Stefaan Leuven, BE 10 33
Posthuma, Niels Leuven, BE 6 67
You, Shuzhen Leuven, BE 2 0

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