Low resistance replacement metal gate structure
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United States of America Patent
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Nov 29, 2016
Grant Date -
Jun 9, 2016
app pub date -
Feb 12, 2016
filing date -
Dec 2, 2014
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Abstract
A first sacrificial gate structure of a first width and a second sacrificial gate structure of a second width greater than the first width are provided on a semiconductor material portion. A dielectric spacer and a planarizing dielectric material are provided surrounding each sacrificial gate structure. Each sacrificial gate structure is then removed forming gate cavities. A high k dielectric material, a metal nitride hard mask and a physical vapor deposited (PVD) amorphous-silicon cap are provided. Vertical portions of the metal nitride hard mask and the high k dielectric material are removed from a portion of each gate cavity. Additional PVD amorphous silicon is then deposited and then all amorphous silicon and remaining metal nitride hard mask portions are removed. A work function portion having a stair-like surface, a diffusion barrier portion, a conductive metal structure and a dielectric cap are then formed into to each of the gate cavities.
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- 15 United States
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Patent Owner(s)
- INTERNATIONAL BUSINESS MACHINES CORPORATION
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Ok, Injo | Loudonville, US | 167 | 689 |
Pranatharthiharan, Balasubramanian | Watervliet, US | 225 | 1252 |
Surisetty, Charan Veera Venkata Satya | Clifton Park, US | 19 | 225 |
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