MOSFET STRUCTURE AND METHOD OF MANUFACTURING SAME

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United States of America Patent

APP PUB NO 20160163825A1
SERIAL NO

14905151

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Abstract

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Provided are a MOSFET and a method for manufacturing the same. The method comprises: a. Providing a substrate (100), a dummy gate vacancy, a first spacer (150), source/drain extension regions (205), source/drain regions (200) and an interlayer dielectric layer (300); b. Depositing a silicon dioxide layer (160) in the dummy gate vacancy on the substrate; c. Depositing a gate dielectric layer (400) on the formed semiconductor structure; d. Forming a second spacer (450) in the dummy gate vacancy, wherein the second spacer (450) is adjacent to the gate dielectric layer (400) and is flushed with the interlayer dielectric layer (300); and e. Forming a gate stack (500) in the dummy gate vacancy . Negative effects caused by variation in thickness of the oxide layer under the gate can be eliminated, and device performance can be improved.

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Patent Owner(s)

Patent OwnerAddress
INSTITUTE OF MICROELECTRONICS CHINESE ACADEMY OF SCIENCES100029 BEIJING CITY CHAOYANG DISTRICT BEITUCHENG WEST ROAD NO 3 CHINESE ACADEMY OF SCIENCES INSTITUTE OF MICROELECTRONICS MUNICIPAL DISTRICT BEIJING CITY 100029

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Li, Rui Beijing, CN 158 935
Yin, Haizhou Poughkeepsie, US 241 2072

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