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Abstract

Provided are a MOSFET and a method for manufacturing the same. The method comprises: a. Providing a substrate (100), a dummy gate vacancy, a first spacer (150), source/drain extension regions (205), source/drain regions (200) and an interlayer dielectric layer (300); b. Depositing a silicon dioxide layer (160) in the dummy gate vacancy on the substrate; c. Depositing a gate dielectric layer (400) on the formed semiconductor structure; d. Forming a second spacer (450) in the dummy gate vacancy, wherein the second spacer (450) is adjacent to the gate dielectric layer (400) and is flushed with the interlayer dielectric layer (300); and e. Forming a gate stack (500) in the dummy gate vacancy . Negative effects caused by variation in thickness of the oxide layer under the gate can be eliminated, and device performance can be improved.

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First Claim