METHOD OF FORMING RECESS STRUCTURE
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United States of America Patent
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Issued Date -
Jun 9, 2016
app pub date -
Dec 3, 2014
filing date -
Dec 3, 2014
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
The present invention is a method of forming a recess structure. First of all, a substrate is provided, and a first ARC layer is entirely formed on the substrate, covering a first region and a second region thereof. Then, the first ARC layer in the second region is etched with a CH-based gas. Then, a first removing process is performed to form a first recess in the second region. Next, a second ARC layer is entirely formed on the substrate, covering the first region and the second region. Then, the second ARC layer in the first region is etched, also with the CH-based gas, and the CH-based gas includes at least one of CH4, C2H4, C3H6, CHF3, CH2F2, and CH3F. Finally, a second removing process is performed to form a second recess in the first region.
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