SEMICONDUCTOR LASER DIODE AND LASER ARRAY IMPLEMENTING THE SAME
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United States of America Patent
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Jun 9, 2016
app pub date -
Dec 4, 2015
filing date -
Dec 4, 2015
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Abstract
A semiconductor laser diode (LD) is disclosed. The LD provides a sampled grating distributed feedback (SG-DFB region) region and a distributed feedback (DFB) region accompanied with a region to shift the phase of light between two regions. Because the coupling coefficient κ for the light forwarding the facet of the SG-DFB region is lowered, while, the coupling coefficient for the light forwarding the facet of the DFB region is kept in high, the optical output power extracted from the facet of the SG-DFB region is enhanced.
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