Interposer with lattice construction and embedded conductive metal structures
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United States of America Patent
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Sep 13, 2016
Grant Date -
Jun 16, 2016
app pub date -
Dec 16, 2014
filing date -
Dec 16, 2014
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Abstract
A lattice structure is formed in a non-silicon interposer substrate to create large cells that are multiples of through hole pitches to act as islands for dielectric fields. Each unit cell is then filled with a dielectric material. Thereafter, holes (i.e., through holes or blind holes) are created within the dielectric material in the cells. After hole formation, a conductive metal is formed into each of the holes providing an interposer. This method can enable fine pitch processing in organic-based materials, isolates the thermal coefficient of expansion (TCE) stress from metal vias to low TCE carriers and creates a path to high volume, low costs components in panel form.
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