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Abstract

A semiconductor substrate (epitaxial substrate) having a main surface (upper surface) and made of a wide band gap semiconductor is provided, the semiconductor substrate including a device region formed in the semiconductor substrate, and a peripheral region formed to surround the device region. In the peripheral region, the semiconductor substrate includes a first semiconductor region (drift layer) having a first conductivity type, and a second semiconductor region (electric field relaxing region) formed on the first semiconductor region (drift layer) and having the main surface, the second semiconductor region having a second conductivity type different from the first conductivity type, and a plurality of trenches annularly surrounding the device region are formed in the main surface of the second semiconductor region (electric field relaxing region). Consequently, a wide band gap semiconductor device capable of achieving a higher breakdown voltage is provided without an increase in size.

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First Claim