Semiconductor device

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United States of America Patent

PATENT NO 9564491
APP PUB NO 20160172449A1
SERIAL NO

14963825

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Abstract

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According to one embodiment, a semiconductor device includes an n-type semiconductor layer, a first electrode, and a nitride semiconductor layer. The n-type semiconductor layer includes diamond. The nitride semiconductor layer is provided between the n-type semiconductor layer and the first electrode. The nitride semiconductor layer includes AlxGa1−xN (0≦x≦1) and is of n-type.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sakai, Tadashi Yokohama, JP 166 1888
Suzuki, Mariko Yokohama, JP 93 1852

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