Planar III-V field effect transistor (FET) on dielectric layer

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United States of America Patent

PATENT NO 9882021
SERIAL NO

15047871

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Abstract

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A method of forming a semiconductor substrate including a type III-V semiconductor material directly on a dielectric material that includes forming a trench in a dielectric layer, and forming a via within the trench extending from a base of the trench to an exposed upper surface of an underlying semiconductor including substrate. A III-V semiconductor material is formed extending from the exposed upper surface of the semiconductor substrate filling at least a portion of the trench.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Cheng-Wei White Plains, US 142 576
Kiewra, Edward W South Burlington, US 47 540
Majumdar, Amlan White Plains, US 159 3269
Rana, Uzma Chappaqua, US 19 136
Sadana, Devendra K Pleasantville, US 897 9915
Shiu, Kuen-Ting Yorktown Heights, US 122 769
Sun, Yanning Scarsdale, US 51 352

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