METHOD AND APPARATUS FOR REDUCING LEAKAGE CURRENT IN MEMORY

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United States of America Patent

APP PUB NO 20160180924A1
SERIAL NO

14580171

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Abstract

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A method and apparatus in which word line drivers associated with memory word lines are selectively powered based on an active memory address reduces current consumption in a memory.

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Patent Owner(s)

Patent OwnerAddress
NXP B V F/K/A FREESCALE SEMICONDUCTOR INC5656 AG HIGH TECH CAMPUS 60 EINDHOVEN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Rana, Manmohan Ghaziabad, IN 16 82
Singh, Paramjeet Delhi, IN 19 99

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