PLASMA PROCESSING METHOD
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jun 23, 2016
app pub date -
Sep 11, 2015
filing date -
Dec 19, 2014
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A plasma processing method capable of controlling an etching rate of a SiN film and obtaining high selectivity to a SiO2 film and Si at the same time performs etch-back of a SiN film as a processing object of a film structure including a SiO2 film and the SiN film or a Si film and the SiN film on a surface of a substrate placed in a processing chamber by using inductively couple plasma formed in the processing chamber by supplying process gas including CHF3 or CF4 and O2 gas into the processing chamber inside a vacuum vessel and supplying RF power of 7-50 MHz to an induction coil surrounding an outer circumference of the processing chamber.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully