Capacitor structure compatible with nanowire CMOS

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United States of America Patent

PATENT NO 10170537
APP PUB NO 20160181352A1
SERIAL NO

14581043

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Abstract

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A semiconductor device is provided that includes a pedestal of an insulating material present over at least one layer of a semiconductor material, and at least one fin structure in contact with the pedestal of the insulating material. Source and drain region structures are present on opposing sides of the at least one fin structure. At least one of the source and drain region structures includes at least two epitaxial material layers. A first epitaxial material layer is in contact with the at least one layer of semiconductor material. A second epitaxial material layer is in contact with the at least one fin structure. The first epitaxial material layer is separated from the at least one fin structure by the second epitaxial material layer. A gate structure present on the at least one fin structure.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINE CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Kangguo Schenectady, US 3073 29638
Doris, Bruce B Slingerlands, US 796 13224
Hashemi, Pouya White Plains, US 600 4453
Khakifirooz, Ali Los Altos, US 842 11881
Reznicek, Alexander Troy, US 1407 11147

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