Semiconductor devices having low contact resistance and low current leakage
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United States of America Patent
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Aug 28, 2018
Grant Date -
Jun 23, 2016
app pub date -
Dec 23, 2014
filing date -
Dec 23, 2014
priority date (Note) -
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Abstract
The present disclosure is directed to a device and method for reducing the resistance of the middle of the line in a transistor. The transistor has electrical contacts formed above, and electrically connected to, the gate, drain and source. The electrical contact connected to the gate includes a tungsten contact member deposited over the gate, and a copper contact deposited over the tungsten contact member. The electrical contacts connected to the drain and source include tungsten portions deposited over the drain and source regions, and copper contacts deposited over the tungsten portions.
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