Manufacturing Method of Crystalline Semiconductor Film and Semiconductor Device
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United States of America Patent
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Jun 23, 2016
app pub date -
Dec 16, 2015
filing date -
Dec 18, 2014
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Abstract
A change in electrical characteristics is inhibited in a semiconductor device using a transistor including an oxide semiconductor having crystallinity, and the reliability of the semiconductor device is improved. Further, a semiconductor device with low power consumption is provided. An oxide semiconductor film is formed in such a manner that an oxide is formed over an yttria-stabilized zirconia substrate; the temperature of the oxide is increased to a first temperature in an inert atmosphere; the inert atmosphere is switched to an oxidizing atmosphere while the temperature of the oxide is kept at the first temperature; and the temperature of the oxide is decreased to a second temperature in the oxidizing atmosphere.
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