Semiconductor Device and Method for Manufacturing a Semiconductor Device
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United States of America Patent
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Jun 23, 2016
app pub date -
Dec 16, 2015
filing date -
Dec 17, 2014
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Abstract
A semiconductor device includes a semiconductor material having a bandgap larger than 2 eV and less than 10 eV, and a contact layer in contact with the semiconductor material. The contact layer includes a metal nitride. A non-ohmic contact is formed between the semiconductor material and the contact layer.
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