EMBEDDED PHASE CHANGE MEMORY DEVICES AND RELATED METHODS
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United States of America Patent
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Issued Date -
Jun 23, 2016
app pub date -
Dec 18, 2014
filing date -
Dec 18, 2014
priority date (Note) -
Abandoned
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Abstract
A method for making an integrated circuit (IC) including embedded phase change memory (PCM) may include forming an array of heating elements above a substrate including processing circuitry thereon, and forming a respective PCM chalcogenide glass layer above each heating element. This may be done by forming a tellurium-rich, germanium-antimony-tellurium (GST) layer above the heating element, and forming a germanium-rich GST layer above the tellurium-rich GST layer. In another embodiment, the method may include forming the PCM glass layers to have a nitrogen concentration doping profile that increase in a direction upward from the heating element.
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