Voltage control for crosspoint memory structures

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United States of America Patent

PATENT NO 9601195
APP PUB NO 20160189775A1
SERIAL NO

14908667

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Abstract

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The present disclosure provides a memory cell that includes a resistive memory element disposed between a first conductor and a second conductor, the first conductor and the second conductor configured to activate the resistive memory element. The memory cell also includes a diode disposed in parallel with the memory element between the first conductor and the second conductor.

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Patent Owner(s)

  • HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Buchanan, Brent Edgar Fort Collins, US 3 28

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