EPITAXIAL STRUCTURE AND GROWTH THEREOF
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United States of America Patent
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Issued Date -
Jun 30, 2016
app pub date -
Dec 30, 2014
filing date -
Dec 30, 2014
priority date (Note) -
Abandoned
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Abstract
The invention provides an epitaxial growth structure and a growth method thereof. The epitaxial growth structure comprises a substrate, a plurality of seeds, a plurality of nanorods and a film. The seeds arranged in an array are disposed on a surface of the substrate. The nanorods are disposed longitudinally on the seeds, respectively. The film covers horizontally on upper surfaces of the nanorods to form a substantial plane.
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