Enriched, high mobility strained fin having bottom dielectric isolation
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United States of America Patent
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Apr 4, 2017
Grant Date -
Jun 30, 2016
app pub date -
Dec 30, 2014
filing date -
Dec 30, 2014
priority date (Note) -
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Abstract
Embodiments are directed to a method of enriching and electrically isolating a fin of a FinFET. The method includes forming at least one fin. The method further includes forming under a first set of conditions an enriched upper portion of the at least one fin. The method further includes forming under a second set of conditions an electrically isolated region from a lower portion of the at least one fin, wherein forming under the first set of conditions is spaced in time from forming under the second set of conditions. The method further includes controlling the first set of conditions separately from the second set of conditions.
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