Charge carrier transport facilitated by strain
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United States of America Patent
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Dec 13, 2016
Grant Date -
Jun 30, 2016
app pub date -
Dec 30, 2014
filing date -
Dec 30, 2014
priority date (Note) -
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Abstract
A semiconductor structure and formation thereof. The semiconductor structure has a first semiconductor layer with a first lattice structure and a second epitaxial semiconductor layer that is lattice-matched with the first semiconductor layer. At least two source/drain regions, which have a second lattice structure, penetrate the second semiconductor layer and contact the first semiconductor layer. A portion of the second semiconductor layer is between the source/drain regions and has a degree of uniaxial strain that is based, at least in part, on a difference between the first lattice structure and the second lattice structure.
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