Semiconductor device and method of forming shielding layer over integrated passive device using conductive channels
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United States of America Patent
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Feb 19, 2019
Grant Date -
Jul 7, 2016
app pub date -
Mar 14, 2016
filing date -
Sep 5, 2008
priority date (Note) -
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Abstract
A semiconductor device is made by providing a substrate, forming a first insulation layer over the substrate, forming a first conductive layer over the first insulation layer, forming a second insulation layer over the first conductive layer, and forming a second conductive layer over the second insulation layer. A portion of the second insulation layer, first conductive layer, and second conductive layer form an integrated passive device (IPD). The IPD can be an inductor, capacitor, or resistor. A plurality of conductive pillars is formed over the second conductive layer. One conductive pillar removes heat from the semiconductor device. A third insulation layer is formed over the IPD and around the plurality of conductive pillars. A shield layer is formed over the IPD, third insulation layer, and conductive pillars. The shield layer is electrically connected to the conductive pillars to shield the IPD from electromagnetic interference.
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