SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
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United States of America Patent
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Issued Date -
Jul 7, 2016
app pub date -
Jul 4, 2014
filing date -
Aug 20, 2013
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Abstract
A first electrode being in contact with the first main surface of the silicon carbide semiconductor substrate and in ohmic junction with the silicon carbide semiconductor substrate is formed. At least a portion of the silicon carbide semiconductor substrate on a side of the second main surface is removed. A second electrode in contact with the second main surface of the silicon carbide semiconductor substrate exposed by removing at least a portion of the silicon carbide semiconductor substrate and in ohmic junction with the silicon carbide semiconductor substrate is formed. A metal layer being in electrical contact with a fourth main surface of the second electrode is formed. A thickness of the metal layer is greater than a thickness of the silicon carbide semiconductor substrate after the removal of at least a portion of the silicon carbide semiconductor substrate.
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