Group III-N lateral schottky barrier diode and method for manufacturing thereof

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United States of America Patent

APP PUB NO 20160197203A1
SERIAL NO

14757679

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Abstract

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A group III-N lateral Schottky diode is disclosed. The diode may include a substrate, a nucleation layer formed on the substrate, a buffer layer formed on the nucleation layer, and a group III-N channel stack formed on the buffer layer. The diode may further include, on the channel stack, a group III-N barrier containing aluminum, where the aluminum content of the barrier decreases towards the channel stack. The diode may further include a passivation layer formed on the group III-N barrier, a cathode formed in an opening through the passivation layer where the opening at least extends to the barrier, and an anode formed in another opening through the passivation layer partially extending into the barrier, the anode forming a Schottky contact with the barrier.

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Patent Owner(s)

Patent OwnerAddress
IMEC VZWKAPELDREEF 75 LEUVEN 3001
KATHOLIEKE UNIVERSITEIT LEUVEN KU LEUVEN R&DWAAISTRAAT 6 BOX 5105 LEUVEN 3000

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hu, Jie Leuven, BE 56 297

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