Group III-N lateral schottky barrier diode and method for manufacturing thereof
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United States of America Patent
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Issued Date -
Jul 7, 2016
app pub date -
Dec 23, 2015
filing date -
Dec 23, 2014
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Abstract
A group III-N lateral Schottky diode is disclosed. The diode may include a substrate, a nucleation layer formed on the substrate, a buffer layer formed on the nucleation layer, and a group III-N channel stack formed on the buffer layer. The diode may further include, on the channel stack, a group III-N barrier containing aluminum, where the aluminum content of the barrier decreases towards the channel stack. The diode may further include a passivation layer formed on the group III-N barrier, a cathode formed in an opening through the passivation layer where the opening at least extends to the barrier, and an anode formed in another opening through the passivation layer partially extending into the barrier, the anode forming a Schottky contact with the barrier.
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