MAGNETORESISTIVE EFFECT ELEMENT, MANUFACTURING METHOD OF MAGNETORESISTIVE EFFECT ELEMENT, AND MAGNETIC MEMORY
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United States of America Patent
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Mar 11, 2016
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Mar 18, 2014
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Abstract
According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including a first magnetic element; second magnetic layer; an intermediate layer between the first magnetic layer and the second magnetic layer; and a sidewall layer having a laminated structure on a side face of the first magnetic layer. The sidewall layer includes a first layer disposed on the side face of the first magnetic layer and including a first element having an atomic number larger than an atomic number of the first magnetic element, and a second layer including a second element having an atomic number smaller than the atomic number of the first atomic element. The first layer is disposed between the first magnetic layer and the second layer.
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