Substrate Processing Apparatus, Gas Dispersion Unit, Method of Manufacturing Semiconductor Device and Non-Transitory Computer-Readable Recording Medium

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United States of America Patent

APP PUB NO 20160201193A1
SERIAL NO

14669982

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Characteristics of a film formed on a substrate and a manufacturing throughput can be improved. A substrate processing apparatus includes a process chamber configured to process a substrate; a substrate placement unit; and a gas dispersion unit, the gas dispersion unit including: a first supply region facing the substrate and including a first gas dispersion hole configured to supply a first gas and a second gas dispersion hole configured to supply a second gas; and a second supply region facing a portion of a surface of the substrate placement unit outer than a portion of the surface of the substrate placement unit occupied by the substrate and including a third gas dispersion hole having a diameter greater than that of the second gas dispersion hole and configured to supply the second gas.

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Patent Owner(s)

Patent OwnerAddress
HITACHI KOKUSAI ELECTRIC INC15-12 NISHI-SHIMBASHI 2-CHOME MINATO-KU TOKYO 105-8039

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
SAIDO, Shuhei Toyama, JP 62 1449

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