Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)

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United States of America Patent

PATENT NO 9576811
SERIAL NO

14696254

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Abstract

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Methods are provided for integrating atomic layer etch and atomic layer deposition by performing both processes in the same chamber or reactor. Methods involve sequentially alternating between atomic layer etch and atomic layer deposition processes to prevent feature degradation during etch, improve selectivity, and encapsulate sensitive layers of a semiconductor substrate.

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Patent Owner(s)

  • LAM RESEARCH CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hausmann, Dennis M Lake Oswego, US 71 8836
Kabansky, Alexander Santa Clara, US 10 844
Kanarik, Keren Jacobs Los Altos, US 35 2070
Kim, Taeseung San Jose, US 21 708
Lill, Thorsten Santa Clara, US 99 3358
Marks, Jeffrey Saratoga, US 98 4588
Singh, Harmeet Fremont, US 163 5123
Tan, Samantha Fremont, US 48 3090
Yang, Wenbing Fremont, US 33 1103

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