Importance

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Abstract

The present disclosure provides a semiconductor device and fabrication method thereof. A dielectric layer is formed on a first surface of a semiconductor substrate. Trenches are formed in the dielectric layer and on the first surface of the semiconductor substrate. A metal seed layer is formed on sidewalls and bottom of each trench. The semiconductor substrate formed with the metal seed layer is placed inside an electroplating tank containing an electroplating solution. The electroplating tank is controlled in a vacuum state. The semiconductor substrate formed with the metal seed layer is submerged into the electroplating solution. An electrochemical plating process is performed to deposit a metallic material on the metal seed layer to form a metal interconnect structure in the trenches.

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First Claim