Semiconductor device

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United States of America Patent

PATENT NO 9859359
SERIAL NO

15049839

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Abstract

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A first impurity diffusion region is provided within a semiconductor substrate, a second impurity diffusion region is provided within the first impurity diffusion region, a third impurity diffusion region is provided within the second impurity diffusion region, a first portion of a fourth impurity diffusion region is provided within the second impurity diffusion region so as to be spaced from the third impurity diffusion region, and a second portion of the fourth impurity diffusion region is provided in a third portion of the first impurity diffusion region on a side of a surface of the semiconductor substrate, a first contact is provided so as to be in contact with the second portion, the first contact and the third portion overlap in plan view, and a first power supply is connected to the third impurity diffusion region.

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Patent Owner(s)

  • SEIKO EPSON CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Okuyama, Masaki Tsuruoka, JP 10 228
Sato, Hisakatsu Sakata, JP 23 273

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