Selective epitaxially grown III-V materials based devices

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United States of America Patent

PATENT NO 9640622
SERIAL NO

14778574

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Abstract

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A first III-V material based buffer layer is deposited on a silicon substrate. A second III-V material based buffer layer is deposited onto the first III-V material based buffer layer. A III-V material based device channel layer is deposited on the second III-V material based buffer layer.

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Patent Owner(s)

  • INTEL CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chau, Robert S Beaverton, US 514 19067
Chu-Kung, Benjamin Portland, US 216 2242
Dewey, Gilbert Hillsboro, US 440 4111
Goel, Niti Portland, US 38 514
Kavalieros, Jack T Portland, US 512 7917
Metz, Matthew V Portland, US 331 5795
Mukherjee, Niloy Portland, US 230 3785
Radosavljevic, Marko Beaverton, US 466 4738

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