METHOD FOR PRODUCING SiC EPITAXIAL WAFER
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United States of America Patent
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Jul 21, 2016
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Aug 13, 2014
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Sep 4, 2013
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Abstract
The method for producing an SiC epitaxial wafer according to the present invention includes: a step of vacuum baking a coated carbon-based material member at a degree of vacuum of 2.0×10−3 Pa or less in a dedicated vacuum baking furnace; a step of installing the coated carbon-based material member in an epitaxial wafer manufacturing apparatus; and a step of placing an SiC substrate in the epitaxial wafer manufacturing apparatus and epitaxially growing an SiC epitaxial film on the SiC substrate.
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