Method for manufacturing anticorrosive thin film resistor and structure thereof
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United States of America Patent
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Nov 29, 2016
Grant Date -
Jul 21, 2016
app pub date -
Jan 15, 2015
filing date -
Jan 15, 2015
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Abstract
Disclosed are a method for manufacturing an anticorrosive thin film resistor and a structure thereof, which includes a thin film resistor and a protection layer formed on the thin film resistor. The method uses one of silicon (Si) or tantalum (Ta) to serve as a film coating target and, during a process of reactive sputtering, mixes reactive oxygen or nitrogen with a discharge gas so as to coat a thin film on the thin film resistor with the operation temperature of the reactive sputtering process controlled between 100° C.-500° C. As such, the film coating target is passivated to form an anticorrosive protection layer having a thickness of at least 1 μm to prevent change of electrical property of the resistor resulting from electrolytic corrosion.
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