METHOD FOR ETCHING GROUP III-V SEMICONDUCTOR AND APPARATUS FOR ETCHING THE SAME

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United States of America Patent

APP PUB NO 20160211145A1
SERIAL NO

15000458

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Abstract

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Disclosed is a method for etching a group III-V semiconductor, including irradiating, under an atmosphere of an organic gas, neutral particles to a group III-V semiconductor layer formed on a substrate to cause a complex reaction, thereby etching the group III-V semiconductor layer.

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Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITEDTOKYO
TOHOKU TECHNO ARCH CO LTD468 AZA AOBA ARAMAKI AOBA-KU SENDAI-SHI MIYAGI 980-0845

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gu, Xun Miyagi, JP 20 46
Kikuchi, Yoshiyuki Miyagi, JP 63 1366
Samukawa, Seiji Miyagi, JP 58 2132

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