Importance

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Abstract

Etching having high selectivity is performed within a plane of a substrate. To this end, a substrate processing apparatus includes a substrate support where a substrate including a first film containing at least silicon and a second film having a silicon content ratio lower than that of the first film is placed; a process chamber wherein the substrate support is disposed; a gas supply system configured to supply an etching gas to the substrate; a coolant channel disposed in the substrate support and having a coolant flowing therein; a coolant flow rate controller configured to control a flow rate of the coolant supplied to the coolant channel; a control unit configured to control at least the coolant flow rate controller such that a temperature of the substrate is maintained whereat an etch rate of the first film is higher than that of the second film while the etching gas is in contact with the substrate; and an exhaust system configured to exhaust an inner atmosphere of the process chamber.

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First Claim