Convex shaped thin-film transistor device having elongated channel over insulating layer in a groove of a semiconductor substrate
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United States of America Patent
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Aug 29, 2017
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N/A
app pub date -
Jan 5, 2016
filing date -
Dec 27, 2006
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Abstract
The present invention provides a semiconductor device that has a shorter distance between the bit lines and easily achieves higher storage capacity and density. The semiconductor device includes: first bit lines and an insulating layer that is provided between the first bit lines and in a groove. First faces of the first bit lines are aligned on a first line and second faces of the first bit lines are aligned on a second line. A first face of the insulating layer is disposed at a third line that is a first distance from the first line in a first direction and a second face of the insulating layer is disposed at a fourth line that is a second distance from the second line in a second direction.
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