SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Jul 21, 2016
app pub date -
Jul 23, 2014
filing date -
Sep 6, 2013
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Abstract
A SiC semiconductor device includes a SiC substrate, a gate insulating film formed on a surface of the SiC substrate and made of SiO2, and a gate electrode formed on the gate insulating film. A maximum value of a nitrogen concentration in a region within 10 nm from an interface between the SiC substrate and the gate insulating film is greater than or equal to 3×1019 cm−3. A maximum value of a nitrogen concentration in a region within 10 nm from an interface between the gate insulating film and the gate electrode is less than or equal to 1×1020 cm−3.
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