Memory cells and methods of making memory cells
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United States of America Patent
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Dec 6, 2016
Grant Date -
Jul 21, 2016
app pub date -
Mar 25, 2016
filing date -
May 4, 2012
priority date (Note) -
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Abstract
Some embodiments include a memory cell having a data storage region between a pair of conductive structures. The data storage region is configured to support a transitory structure which alters resistance through the memory cell. The data storage region includes two or more portions, with one of the portions supporting a higher resistance segment of the transitory structure than another of the portions. Some embodiments include a method of forming a memory cell. First oxide and second oxide regions are formed between a pair of conductive structures. The oxide regions are configured to support a transitory structure which alters resistance through the memory cell. The oxide regions are different from one another so that one of the oxide regions supports a higher resistance segment of the transitory structure than the other.
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