Memristor structures

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United States of America Patent

PATENT NO 9793473
APP PUB NO 20160218285A1
SERIAL NO

14914808

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Abstract

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A memristor structure may be provided that includes a first electrode, a second electrode, and a buffer layer disposed on the first electrode. The memristor structure may include a switching layer interposed between the second electrode and the buffer layer to form, when a voltage is applied, a filament or path that extends from the second electrode to the buffer layer and to form a Schottky-like contact or a heterojunction between the filament and the buffer layer.

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Patent Owner(s)

  • HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bratkovski, Alexandre M Palo Alto, US 157 1846
Wang, Shih-Yuan Palo Alto, US 322 4482
Williams, R Stanley Palo Alto, US 277 5892
Yang, Jianhua Palo Alto, US 174 2056
Zhang, Minxian Max Palo Alto, US 25 149

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