WRITING METHOD AND READING METHOD OF PHASE CHANGE MEMORY
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Aug 4, 2016
app pub date -
Jan 30, 2015
filing date -
Jan 30, 2015
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A writing method and a reading method of a phase change memory (PCM) are provided. The PCM has a plurality of memory cells. The writing method comprises the following steps. At least one stress pulse is applied for aging at least one of the memory cells. A starting pulse is applied to all of the memory cells of the PCM for increasing a resistance of each of the memory cells. A detection pulse is applied to all of the memory cells of the PCM for decreasing the resistance of each of the memory cells and detecting the resistance changing speed of each of the memory cells. A set pulse is applied to the aged memory cells. A reset pulse is applied to the non-aged memory cells.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully