Methods for decreasing carbon-hydrogen content of amorphous carbon hardmask films

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United States of America Patent

PATENT NO 9928994
SERIAL NO

14612814

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Abstract

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A method for depositing an amorphous carbon hardmask film includes arranging a substrate in a processing chamber, supplying a carrier gas to the processing chamber, supplying a hydrocarbon precursor to the processing chamber, supplying fluorine precursor from a group consisting of WFa, NFb, SFc, and F2 to the processing chamber, one of supplying plasma to the processing chamber or creating plasma in the processing chamber, and depositing an amorphous carbon hardmask film on the substrate. Fluorine from the fluorine precursor combines with hydrogen from the hydrocarbon precursor in gas phase reactions.

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Patent Owner(s)

  • LAM RESEARCH CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Reddy, Sirish Hillsboro, US 15 812
Shaikh, Fayaz Portland, US 14 506

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