Reducing substrate bowing caused by high percentage sige layers
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United States of America Patent
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Jan 3, 2017
Grant Date -
Aug 4, 2016
app pub date -
Feb 4, 2015
filing date -
Feb 4, 2015
priority date (Note) -
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Abstract
The present invention relates generally to semiconductor devices and more particularly, to a structure and method for reducing substrate bowing resulting from the formation of strained SiGe layers having a high percentage of germanium (“high concentration SiGe”) on silicon substrates. During the epitaxial growth of the high concentration SiGe layer, carbon dopant atoms may be introduced to the crystalline lattice structure of the SiGe, forming a SiGe:C layer. The carbon dopant atoms may reduce tensile strain in the SiGe:C layer during annealing, thereby reducing substrate bowing.
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