Semiconductor memory device and method for manufacturing same
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United States of America Patent
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Sep 12, 2017
Grant Date -
Aug 4, 2016
app pub date -
Jun 9, 2015
filing date -
Jan 30, 2015
priority date (Note) -
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Abstract
A semiconductor memory device having one embodiment which includes a substrate; a stacked body provided on the substrate and including a plurality of electrode layers separately stacked; a first upper layer gate provided on the stacked body; an interlayer insulating layer provided on the first upper layer gate; an insulating part continuously provided from the first upper layer gate to the substrate and extending in a first direction parallel to a major surface of the substrate; a second upper layer gate; a semiconductor part; a charge storage film; and a semiconductor layer provided from an upper end of the semiconductor part to a portion of the semiconductor part reaching the second upper layer gate. The second upper layer gate is provided on the interlayer insulating layer and the insulating part, and extends on a first surface parallel to the major surface.
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